BTP8550N3
器件描述：Low VCESAT PNP Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：159KB，共4页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C313N3-H
Issued Date : 2003.09.26
Revised Date :
Page No. : 1/4
BTP8550N3 CYStek Product Specification
Low VCESAT PNP Epitaxial Planar Transistor
BTP8550N3
Features
• Low VCE(SAT), -0.18V(typically) at IC=-500mA/IB=-50mA.
• Complementary to BTN8050N3.
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -30 V
Collector-Emitter Voltage VCEO -20
Emitter-Base Voltage VEBO -5 V
Collector Current IC -1 A
Power Dissipation Pd 225 mW
Thermal Resistance, Junction to Ambient RθJA 556 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
SOT-23
BTP8550N3
B： Base
C： Collector
E： Emitter
Spec. No. : C313N3-H
Issued Date : 2003.09.26
Revised Date :
Page No. : 1/4
BTP8550N3 CYStek Product Specification
Low VCESAT PNP Epitaxial Planar Transistor
BTP8550N3
Features
• Low VCE(SAT), -0.18V(typically) at IC=-500mA/IB=-50mA.
• Complementary to BTN8050N3.
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -30 V
Collector-Emitter Voltage VCEO -20
Emitter-Base Voltage VEBO -5 V
Collector Current IC -1 A
Power Dissipation Pd 225 mW
Thermal Resistance, Junction to Ambient RθJA 556 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
SOT-23
BTP8550N3
B： Base
C： Collector
E： Emitter