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BTP2907AN3

器件描述:General Purpose PNP Epitaxial Planar Transistor
器件厂商:CYSTEKEC [Cystech Electonics Corp.]
文件大小:168.01KB,共4页
Sponsor by e络盟
器件资料摘要:
CYStech Electronics Corp.


Spec. No. : C317N3
Issued Date : 2003.06.30
Revised Date :
Page No. : 1/4

BTP2907AN3 CYStek Product Specification


General Purpose PNP Epitaxial Planar Transistor

BTP2907AN3

Description
• The BTP2907AN3 is designed for general purpose amplifier applications. It is housed in the
SOT-23/SC-59 package which is designed for low power surface mount applications.
• Low VCE(sat)
• High switching speed.
• Complementary to BTN2222AN3

Equivalent Circuit Outline


Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60
Emitter-Base Voltage VEBO -5 V
Collector Current IC -600 mA
Power Dissipation @TA=25℃ Pd 225 (Note 1) mW
Thermal Resistance, Junction to Ambient RθJA 556 (Note 1) °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note 1:When mounted on a FR-5 board with area measuring 1.0× 0.75× 0.062 in.


BTP2907AN3

SOT-23

B: Base
C: Collector
E: Emitter