BTP2907A3
器件描述：General Purpose PNP Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：174.09KB，共5页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C317A3-H
Issued Date : 2002.06.11
Revised Date : 2005.06.29
Page No. : 1/5
BTP2907A3 CYStek Product Specification
General Purpose PNP Epitaxial Planar Transistor
BTP2907A3
Description
• The BTP2907A3 is designed for general purpose amplifier and high-speed switching, medium power
applications.
• Low collector saturation voltage
• High speed switching.
• Complementary to BTN2222A3
• Pb-free package
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO
Emitter-Base Voltage VEBO -5 V
Collector Current IC -600 mA
Power Dissipation Pd 625 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTP2907A3
TO-92
B： Base
C： Collector
E： Emitter
E B C
Spec. No. : C317A3-H
Issued Date : 2002.06.11
Revised Date : 2005.06.29
Page No. : 1/5
BTP2907A3 CYStek Product Specification
General Purpose PNP Epitaxial Planar Transistor
BTP2907A3
Description
• The BTP2907A3 is designed for general purpose amplifier and high-speed switching, medium power
applications.
• Low collector saturation voltage
• High speed switching.
• Complementary to BTN2222A3
• Pb-free package
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO
Emitter-Base Voltage VEBO -5 V
Collector Current IC -600 mA
Power Dissipation Pd 625 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTP2907A3
TO-92
B： Base
C： Collector
E： Emitter
E B C