CYStech Electronics Corp.


Spec. No. : C210N3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 1/4

BTNA44N3 CYStek Product Specification



High Voltage NPN Epitaxial Planar Transistor
BTNA44N3
Features
• High breakdown voltage. (BVCEO =400V)
• Low saturation voltage, typically VCE(sat) = 0.1V at IC/IB =10mA/1mA.
• Complementary to BTPA94N3



Symbol Outline




Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limit Unit
Collector-Base Voltage VCBO 400 V
Collector-Emitter Voltage VCEO
Emitter-Base Voltage VEBO 6 V
Collector Current IC 300 mA
Power Dissipation Pd 225 (Note) mW
Thermal Resistance, Junction to Ambient RθJA 556 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in.

SOT-23


BTNA44N3

B： Base
C： Collector
E： Emitter