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BTP2907AS3

器件描述:General Purpose PNP Epitaxial Planar Transistor
器件厂商:CYSTEKEC [Cystech Electonics Corp.]
文件大小:146.34KB,共4页
Sponsor by e络盟
器件资料摘要:
CYStech Electronics Corp.


Spec. No. : C317S3-H
Issued Date : 2003.04.11
Revised Date :
Page No. : 1/4

BTP2907AS3 CYStek Product Specification


General Purpose PNP Epitaxial Planar Transistor

BTP2907AS3

Description
• The BTP2907AS3 is designed for general purpose amplifier applications. It is housed in the
SOT-323/SC-70 package which is designed for low power surface mount applications.
• Low VCE(sat)
• High switching speed.
• Complementary to BTN2222AS3

Equivalent Circuit Outline


Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -600 mA
Power Dissipation @TA=25℃ Pd 150 (Note 1) mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note 1:When mounted on a FR-5 board with area measuring 1.0× 0.75× 0.062 in.



BTP2907AS3

SOT-323

B: Base
C: Collector
E: Emitter