BTNA13A3
器件描述：Gentral Purpose NPN Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：151.11KB，共4页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C215A3
Issued Date : 2003.03.27
Revised Date :
Page No. : 1/4
BTNA13A3 CYStek Product Specification
Gentral Purpose NPN Epitaxial Planar Transistor
BTNA13A3
Description
• The BTNA14A3 is a darlington amplifier transistor
• Complementary to BTPA63A3.
Equivalent Circuit
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCES 30 V
Emitter-Base Voltage VEBO 10 V
Collector Current IC 0.5 A
Power Dissipation Pd 625 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTNA13A3
TO-92
B： Base
C： Collector
E： Emitter
Spec. No. : C215A3
Issued Date : 2003.03.27
Revised Date :
Page No. : 1/4
BTNA13A3 CYStek Product Specification
Gentral Purpose NPN Epitaxial Planar Transistor
BTNA13A3
Description
• The BTNA14A3 is a darlington amplifier transistor
• Complementary to BTPA63A3.
Equivalent Circuit
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCES 30 V
Emitter-Base Voltage VEBO 10 V
Collector Current IC 0.5 A
Power Dissipation Pd 625 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTNA13A3
TO-92
B： Base
C： Collector
E： Emitter