BTN6517A3
器件描述：High Voltage NPN Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：147.47KB，共4页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C231A3
Issued Date : 2003.04.12
Revised Date :
Page No. : 1/4
BTN6517A3 CYStek Product Specification
High Voltage NPN Epitaxial Planar Transistor
BTN6517A3
Features
• High Breakdown Voltage:BVCEO≥350V
• Complementary to BTP6520A3
Symbol
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 350 V
Collector-Emitter Voltage VCEO 350 V
Emitter-Base Voltage VEBO 6 V
Collector Current---continuous IC 500 mA
Power Dissipation @TA=25℃ Pd 625 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTN6517A3
TO-92
B： Base
C： Collector
E： Emitter
Spec. No. : C231A3
Issued Date : 2003.04.12
Revised Date :
Page No. : 1/4
BTN6517A3 CYStek Product Specification
High Voltage NPN Epitaxial Planar Transistor
BTN6517A3
Features
• High Breakdown Voltage:BVCEO≥350V
• Complementary to BTP6520A3
Symbol
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 350 V
Collector-Emitter Voltage VCEO 350 V
Emitter-Base Voltage VEBO 6 V
Collector Current---continuous IC 500 mA
Power Dissipation @TA=25℃ Pd 625 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTN6517A3
TO-92
B： Base
C： Collector
E： Emitter