BTNA06N3
器件描述：General Purpose NPN Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：145.19KB，共4页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C216N3
Issued Date : 2003.10.07
Revised Date :
Page No. : 1/4
BTNA06N3 CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTNA06N3
Description
• The BTNA06N3 is designed for use in general purpose amplification and switching application.
• High current , IC = 0.5A
• Low VCE(sat) , VCE(sat) = 0.25V(typ.) at IC/IB = 100mA/10mA
• Complementary to BTPA56N3.
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO
Emitter-Base Voltage VEBO 4 V
Collector Current IC 500 mA
Power Dissipation Pd 225 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTNA06N3
SOT-23
B： Base
C： Collector
E： Emitter
Spec. No. : C216N3
Issued Date : 2003.10.07
Revised Date :
Page No. : 1/4
BTNA06N3 CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTNA06N3
Description
• The BTNA06N3 is designed for use in general purpose amplification and switching application.
• High current , IC = 0.5A
• Low VCE(sat) , VCE(sat) = 0.25V(typ.) at IC/IB = 100mA/10mA
• Complementary to BTPA56N3.
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO
Emitter-Base Voltage VEBO 4 V
Collector Current IC 500 mA
Power Dissipation Pd 225 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTNA06N3
SOT-23
B： Base
C： Collector
E： Emitter