BTN5551N3
器件描述：General Purpose NPN Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：152.73KB，共4页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C208N3-H
Issued Date : 2003.06.06
Revised Date :
Page No. : 1/4
BTN5551N3 CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTN5551N3
Description
The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage.
Features
• High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
• Complement to BTP5401N3
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160
Emitter-Base Voltage VEBO 6 V
Collector Current IC 600 mA
Power Dissipation Pd 225 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTN5551N3
SOT-23
B： Base
C： Collector
E： Emitter
Spec. No. : C208N3-H
Issued Date : 2003.06.06
Revised Date :
Page No. : 1/4
BTN5551N3 CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTN5551N3
Description
The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage.
Features
• High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
• Complement to BTP5401N3
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160
Emitter-Base Voltage VEBO 6 V
Collector Current IC 600 mA
Power Dissipation Pd 225 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTN5551N3
SOT-23
B： Base
C： Collector
E： Emitter