BTN8050SA3
器件描述：General Purpose NPN Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：144.31KB，共4页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C222A3
Issued Date : 2003.10.07
Revised Date :
Page No. : 1/4
BTN8050SA3 CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTN8050SA3
Description
The BTN8050SA3 is designed for use in output amplifier of portable radios in class B push pull
operation.
Features
• High collector current , IC = 700mA
• Low VCE(sat)
• Complementary to BTP8550SA3.
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 25 V
Collector-Emitter Voltage VCEO 20
Emitter-Base Voltage VEBO 5 V
Collector Current IC 700 mA
Base Current IB 100 mA
Power Dissipation Pd 625 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTN8050SA3
TO-92
B： Base
C： Collector
E： Emitter
E C B
Spec. No. : C222A3
Issued Date : 2003.10.07
Revised Date :
Page No. : 1/4
BTN8050SA3 CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTN8050SA3
Description
The BTN8050SA3 is designed for use in output amplifier of portable radios in class B push pull
operation.
Features
• High collector current , IC = 700mA
• Low VCE(sat)
• Complementary to BTP8550SA3.
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 25 V
Collector-Emitter Voltage VCEO 20
Emitter-Base Voltage VEBO 5 V
Collector Current IC 700 mA
Base Current IB 100 mA
Power Dissipation Pd 625 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTN8050SA3
TO-92
B： Base
C： Collector
E： Emitter
E C B