CYStech Electronics Corp.


Spec. No. : C223N3-H
Issued Date : 2004.03.03
Revised Date :
Page No. : 1/4

BTN8050N3 CYStek Product Specification


General Purpose NPN Epitaxial Planar Transistor
BTN8050N3

Description
The BTN8050N3 is designed for general purpose low frequency amplifier applications.

Features
• High collector current , IC = 0.8A
• Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400mA / 20mA
• Complementary to BTP8550N3.

Symbol Outline


Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 20
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 800 mA
Collector Current (Pulse) ICP 1.5 (Note) A
Power Dissipation Pd 225 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : Single pulse, Pw=10ms



BTN8050N3

SOT-23

B： Base
C： Collector
E： Emitter