CYStech Electronics Corp.


Spec. No. : C227N3
Issued Date : 2003.06.11
Revised Date :
Page No. : 1/4

BTN2222AN3 CYStek Product Specification


General Purpose NPN Epitaxial Planar Transistor

BTN2222AN3

Description
• The BTN2222AN3 is designed for general purpose amplifier applications. It is housed in the
SOT-23/SC-59 package which is designed for low power surface mount applications.
• Low VCE(sat)
• Low leakage current
• High cutoff frequency
• Complementary to BTP2907AN3

Symbol Outline


Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40
Emitter-Base Voltage VEBO 6 V
Collector Current IC 600 mA
Power Dissipation @Ta=25℃
Derate above 25℃
Pd
225 (Note 1)
1.8
mW
mW/℃
Thermal Resistance, Junction to
Ambient
RθJA 556 ℃ /W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note 1: when mounted on a FR-5 board with area measuring 1.0× 0.75× 0.062 in.
SOT-23

BTN2222AN3

B： Base
C： Collector
E： Emitter