CYStech Electronics Corp.


Spec. No. : C606E3
Issued Date : 2004.08.18
Revised Date :
Page No. : 1/4

BTN3501E3 CYStek Product Specification



Low Vcesat NPN Epitaxial Planar Transistor
BTN3501E3

Features
• Low VCE(sat)
• High BVCEO
• Excellent current gain characteristics


Symbol Outline



Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO
Emitter-Base Voltage VEBO 6 V
Collector Current (DC) IC 10
Collector Current (Pulse) ICP 20 (Note 1)
A
Power Dissipation @ TA=25℃ PD 2
Power Dissipation @ TC=25℃ PD 50
W
Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W
Thermal Resistance, Junction to Case RθJC 2.5 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : 1. Single Pulse , Pw≦ 380µs,Duty≦ 2%.

BTN3501E3

B： Base
C： Collector
E： Emitter
TO-220AB

B C E