BTN2129E3
器件描述：NPN Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：158.98KB，共5页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C853E3
Issued Date : 2004.06.15
Revised Date : 2004.07.14
Page No. : 1/5
BTN2129E3 CYStek Product Specification
NPN Epitaxial Planar Transistor
BTN2129E3
Description
The BTN2129E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
switching application.
Features:
•High current capability
•Low VCE(SAT)
•High current gain
•Monolithic construction with built-in base-emitter shunt resistors
Equivalent Circuit Outline
TO-220AB
BTN2129E3
B： Base
C： Collector
E： Emitter
B
C
E
R1≈8k R2≈120
B C E
Spec. No. : C853E3
Issued Date : 2004.06.15
Revised Date : 2004.07.14
Page No. : 1/5
BTN2129E3 CYStek Product Specification
NPN Epitaxial Planar Transistor
BTN2129E3
Description
The BTN2129E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
switching application.
Features:
•High current capability
•Low VCE(SAT)
•High current gain
•Monolithic construction with built-in base-emitter shunt resistors
Equivalent Circuit Outline
TO-220AB
BTN2129E3
B： Base
C： Collector
E： Emitter
B
C
E
R1≈8k R2≈120
B C E