BTN2222A3
器件描述：General Purpose NPN Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：176.34KB，共5页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C227A3
Issued Date : 2003.03.26
Revised Date : 2005.06.29
Page No. : 1/5
BTN2222A3 CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTN2222A3
Description
• Low collector output capacitance.
• High current capability
• Low leakage current
• High cutoff frequency
• Pb-free package
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6
Collector Current IC 600 mA
Power Dissipation @Ta=25℃
Derate above 25℃
Pd 625 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
TO-92
E C B
BTN2222A3
E B C
B： Base
C： Collector
E： Emitter
Spec. No. : C227A3
Issued Date : 2003.03.26
Revised Date : 2005.06.29
Page No. : 1/5
BTN2222A3 CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTN2222A3
Description
• Low collector output capacitance.
• High current capability
• Low leakage current
• High cutoff frequency
• Pb-free package
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6
Collector Current IC 600 mA
Power Dissipation @Ta=25℃
Derate above 25℃
Pd 625 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
TO-92
E C B
BTN2222A3
E B C
B： Base
C： Collector
E： Emitter