BTD965A3
器件描述：Low Vcesat NPN Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：145.63KB，共4页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C847A3
Issued Date : 2003.04.01
Revised Date :
Page No. : 1/4
BTD965A3 CYStek Product Specification
Low Vcesat NPN Epitaxial Planar Transistor
BTD965A3
Features
• Low VCE(sat), Low VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A
• Excellent DC current gain characteristics
• Complementary to BTB1386A3
Equivalent Circuit
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 7 V
IC 5 A(DC)
Collector Current
IC(cp) 8 * 1 A(Pulse)
Power Dissipation Pd 0.75 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : *1. Single Pulse Pw≦ 380us,Duty≦ 2%.
BTD965A3
TO-92
B： Base
C： Collector
E： Emitter
Spec. No. : C847A3
Issued Date : 2003.04.01
Revised Date :
Page No. : 1/4
BTD965A3 CYStek Product Specification
Low Vcesat NPN Epitaxial Planar Transistor
BTD965A3
Features
• Low VCE(sat), Low VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A
• Excellent DC current gain characteristics
• Complementary to BTB1386A3
Equivalent Circuit
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 7 V
IC 5 A(DC)
Collector Current
IC(cp) 8 * 1 A(Pulse)
Power Dissipation Pd 0.75 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : *1. Single Pulse Pw≦ 380us,Duty≦ 2%.
BTD965A3
TO-92
B： Base
C： Collector
E： Emitter