CYStech Electronics Corp.


Spec. No. : C852B3
Issued Date : 2004.05.28
Revised Date :
Page No. : 1/5

BTD5765B3 CYStek Product Specification

Low VCE(sat) NPN Planar Transistor

BTD5765B3
Features
• High current capability
• Low collector-to-emitter saturation voltage
• High allowable power dissipation


Applications
• Relay drivers, lamp drivers, motor drivers, strobes

Symbol

Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 15 V
Collector-Emitter Voltage VCEO 10
Emitter-Base Voltage VEBO 7 V
Collector Current (DC) IC 5 A
Collector Current (Pulse) ICP 9
Collector Power Dissipation (Note) PD 550 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : when a device is mounted on a glass epoxy board, measuring 35mm×30mm×1mm.

BTD5765B3

B : Base
C : Collector
E : Emitter