CYStech Electronics Corp.


Spec. No. : C848D3-H
Issued Date : 2005.05.04
Revised Date :
Page No. : 1/4

BTD882D3 CYStek Product Specification



Low Vcesat NPN Epitaxial Planar Transistor
BTD882D3
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA
• Excellent current gain characteristics
• Complementary to BTB772D3
• Pb-free package

Symbol Outline



Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 3
Collector Current (Pulse) ICP 7 (Note)
A
Power Dissipation (TA=25℃ ) 1
Power Dissipation (TC=25℃ )
PD
10
W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : Pulse test, pulse width≤380µs, duty cycle≤2%.

TO-126ML BTD882D3

B： Base
C： Collector
E： Emitter
E C B