CYStech Electronics Corp.


Spec. No. : C848N3-A
Issued Date : 2004.03.26
Revised Date : 2004.11.08
Page No. : 1/4

BTD2150N3 CYStek Product Specification



Low VCE(sat) NPN Epitaxial Planar Transistor
BTD2150N3
Features
• Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.1A
• Excellent current gain characteristics
• Complementary to BTB1424N3


Symbol Outline



Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limit Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO
Emitter-Base Voltage VEBO 6 V
Collector Current (DC) IC 4 A
Collector Current (Pulse) ICP 7 (Note 1) A
Power Dissipation Pd 225 mW
Thermal Resistance, Junction to Ambient RθJA 556 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : 1. Single Pulse Pw≦ 350µs, Duty≦ 2%.





SOT-23

BTD2150N3

B： Base
C： Collector
E： Emitter