CYStech Electronics Corp.


Spec. No. : C310M3
Issued Date : 2003.06.27
Revised Date :
Page No. : 1/3

BTD5213M3 CYStek Product Specification



NPN Epitaxial Planar Transistor
BTD5213M3
Features
• High VCEO, VCEO=80V
• High IC, IC(DC)=1A
• Low VCE(sat)
• Good current gain linearity
• Complementary to BTB1260M3

Symbol Outline



Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limit Unit
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 80
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 1 A
Collector Current (Pulse) ICP 2 (Note 1) A
0.6 W
1 (Note 2) W Power Dissipation Pd
2 (Note 3) W
208 °C/W
125 (Note 2) °C/W Thermal Resistance, Junction to Ambient RθJA
62.5 (Note 3) °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : 1. Single Pulse Pw≦350µs, Duty≦2%.
2. When mounted on FR-4 PCB with area measuring 10×10×1 mm
3. When mounted on ceramic with area measuring 40×40×1 mm
SOT-89

BTD5213M3

B：Base
C：Collector
E：Emitter
B C E