CYStech Electronics Corp.


Spec. No. : C848M3-A
Issued Date : 2002.08.18
Revised Date : 2005.10.04
Page No. : 1/5

BTD2150AM3 CYStek Product Specification



Low Vcesat NPN Epitaxial Planar Transistor
BTD2150AM3

Features
• Low VCE(sat), VCE(sat)=0.1 V (typical), at IC / IB = 1A / 50mA
• Excellent current gain characteristics
• Complementary to BTB1424AM3
• Pb-free package


Symbol Outline




Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 50
Emitter-Base Voltage VEBO 6 V
Collector Current IC 3 A
0.6
1 *1 Power Dissipation Pd
2 *2
W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : *1 Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm.
*2 When mounted on a 40*40*0.7mm ceramic board.
SOT-89

BTD2150AM3

B： Base
C： Collector
E： Emitter
B C E