BTD2568L3
器件描述：High Voltage NPN Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：156.44KB，共4页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C211L3
Issued Date : 2004.11.18
Revised Date : 2005.03.25
Page No. : 1/4
BTD2568L3 CYStek Product Specification
High Voltage NPN Epitaxial Planar Transistor
BTD2568L3
Features
• High BVCEO, 400V minimum
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 400 V
Collector-Emitter Voltage VCEO
Emitter-Base Voltage VEBO 6 V
Collector Current(DC) IC 300 mA
Collector Current(Pulse) ICP 1 A
Base Current IB 200 mA
Power Dissipation @TC=25°C Pd 5 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTD2568L3
B： Base
C： Collector
E： Emitter
SOT-223
B
C
C
E
Spec. No. : C211L3
Issued Date : 2004.11.18
Revised Date : 2005.03.25
Page No. : 1/4
BTD2568L3 CYStek Product Specification
High Voltage NPN Epitaxial Planar Transistor
BTD2568L3
Features
• High BVCEO, 400V minimum
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 400 V
Collector-Emitter Voltage VCEO
Emitter-Base Voltage VEBO 6 V
Collector Current(DC) IC 300 mA
Collector Current(Pulse) ICP 1 A
Base Current IB 200 mA
Power Dissipation @TC=25°C Pd 5 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTD2568L3
B： Base
C： Collector
E： Emitter
SOT-223
B
C
C
E