CYStech Electronics Corp.


Spec. No. : C848E3
Issued Date : 2004.07.06
Revised Date :
Page No. : 1/5

BTD2150AE3 CYStek Product Specification



Low Vcesat NPN Epitaxial Planar Transistor
BTD2150AE3
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 50mA
• Excellent current gain characteristics
• Complementary to BTB1424AE3


Symbol Outline



Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 50
Emitter-Base Voltage VEBO 6 V
Collector Current (DC) IC 3
Collector Current (Pulse) ICP 7 (Note)
A
Base Current IB 1 A
Power Dissipation (TA=25℃ ) 1.8
Power Dissipation (TC=25℃ )
PD
25
W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : Pulse test, pulse width≤380µs, duty cycle≤2%.

TO-220AB BTD2150AE3

B： Base
C： Collector
E： Emitter
B C E