CYStech Electronics Corp.


Spec. No. : C848A3
Issued Date : 2005.02.04
Revised Date :2005.06.03
Page No. : 1/5

BTD2150A3 CYStek Product Specification



Low Vcesat NPN Epitaxial Planar Transistor
BTD2150A3
Features
• Low VCE(sat), typically 0.25V at IC / IB = 2A / 100mA
0.1V at IC / IB = 1A / 50mA
• Excellent current gain characteristics
• Complementary to BTB1424A3
• Pb-free package

Symbol Outline




Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limit Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 50
Emitter-Base Voltage VEBO 6 V
IC(DC) 3 A
Collector Current
IC(Pulse) 7 (Note) A
Power Dissipation Pd 750 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : *1. Single Pulse Pw≦ 350µs,Duty≦ 2%.

TO-92

BTD2150A3

B： Base
C： Collector
E： Emitter
E C B