CYStech Electronics Corp.


Spec. No. : C850N3
Issued Date : 2004.01.28
Revised Date :2005.07.15
Page No. : 1/5

BTD2098LN3 CYStek Product Specification



Low Vcesat NPN Epitaxial Planar Transistor
BTD2098LN3
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A
• Excellent DC current gain characteristics
• Complementary to BTB1386LN3
• Pb-free package


Symbol Outline


Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 25 V
Collector-Emitter Voltage VCEO 15
Emitter-Base Voltage VEBO 6 V
Collector Current (DC) IC 5 A
Collector Current (Pulse) ICP 8 (Note 1) A
Power Dissipation Pd 0.9 (Note 2) W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : 1.Single Pulse Pw≦ 350µs, Duty≦ 2%.
2.When mounted on a ceramic board with area of 600mm²×0.8mm



BTD2098LN3

SOT-23

B： Base
C： Collector
E： Emitter