CYStech Electronics Corp.


Spec. No. : C847J3
Issued Date : 2003.03.26
Revised Date :2004.07.02
Page No. : 1/4

BTD2118J3 CYStek Product Specification



Low Vcesat NPN Epitaxial Planar Transistor
BTD2118J3
Features
• Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A
• Excellent current gain characteristics
• Complementary to BTB1412J3


Symbol Outline




Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 20
Emitter-Base Voltage VEBO 6 V
Collector Current(DC) IC 5
Collector Current(Pulse) ICP 10 *1
A
Power Dissipation(TA=25℃ ) Pd(TA=25℃ ) 1 *2
Power Dissipation(TC=25℃ ) Pd(TC=25℃ ) 10
W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : *1. Single Pulse , Pw≦ 380µs,Duty≦ 2%.
*2. When mounted on a 40*40*0.7mm ceramic board.

TO-252

BTD2118J3

B： Base
C： Collector
E： Emitter
B C E