CYStech Electronics Corp.


Spec. No. : C850M3
Issued Date : 2004.02.27
Revised Date :2005.10.04
Page No. : 1/5

BTD2098LM3 CYStek Product Specification



Low Vcesat NPN Epitaxial Planar Transistor
BTD2098LM3

Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A
• Excellent DC current gain characteristics
• Complementary to BTB1386LM3
• Pb-free package

Symbol Outline


Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 15
Emitter-Base Voltage VEBO 6 V
Collector Current (DC) IC 5 A
Collector Current (Pulse) ICP 8 (Note 1 ) A
0.6 W
1 (Note 2) W Power Dissipation Pd
2 (Note 3) W
208 °C/W
125 (Note 2) °C/W Thermal Resistance, Junction to Ambient RθJA
62.5 (Note 3) °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : 1. Single Pulse Pw≦ 350µs, Duty≦ 2%.
2.When mounted on FR-4 PCB with area measuring 10×10×1 mm.
3. When mounted on ceramic with area measuring 40×40×1 mm
BTD2098LM3

SOT-89
B： Base
C： Collector
E： Emitter
B C E