BTD1980J3
器件描述：NPN Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：158.32KB，共4页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C654J3
Issued Date : 2004.03.18
Revised Date :
Page No. : 1/4
BTD1980J3 CYStek Product Specification
NPN Epitaxial Planar Transistor
BTD1980J3
Description
The BTD1980J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low
speed switching application.
Equivalent Circuit Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 130 V
Collector-Emitter Voltage VCEO 120
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 4 A
Collector Current (Pulse) ICP 6 (Note ) A
Pd(TA=25℃ ) 1.5 W
Power Dissipation
Pd(TC=25℃ ) 20 W
Thermal Resistance, Junction to Ambient RθJA 83.3 °C/W
Thermal Resistance, Junction to Case RθJC 6.25 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : Single Pulse Pw≦ 350µs, Duty≦ 2%.
BTD1980J3
TO-252
B： Base
C： Collector
E： Emitter
B
C
E
B C E
Spec. No. : C654J3
Issued Date : 2004.03.18
Revised Date :
Page No. : 1/4
BTD1980J3 CYStek Product Specification
NPN Epitaxial Planar Transistor
BTD1980J3
Description
The BTD1980J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low
speed switching application.
Equivalent Circuit Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 130 V
Collector-Emitter Voltage VCEO 120
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 4 A
Collector Current (Pulse) ICP 6 (Note ) A
Pd(TA=25℃ ) 1.5 W
Power Dissipation
Pd(TC=25℃ ) 20 W
Thermal Resistance, Junction to Ambient RθJA 83.3 °C/W
Thermal Resistance, Junction to Case RθJC 6.25 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : Single Pulse Pw≦ 350µs, Duty≦ 2%.
BTD1980J3
TO-252
B： Base
C： Collector
E： Emitter
B
C
E
B C E