CYStech Electronics Corp.


Spec. No. : C849I3
Issued Date : 2003.04.18
Revised Date :
Page No. : 1/4

BTD1864AI3 CYStek Product Specification



Low Vcesat NPN Epitaxial Planar Transistor
BTD1864AI3
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A
• Excellent current gain characteristics
• Complementary to BTB1243AI3


Symbol Outline




Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5 V
IC(DC) 3
Collector Current
IC(Pulse) 7 *1
A
Pd(TA=25℃ ) 1
Power Dissipation
Pd(TC=25℃ ) 15
W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : *1. Single Pulse Pw=10ms

TO-251


BTD1864AI3

B： Base
C： Collector
E： Emitter
B
C
E