CYStech Electronics Corp.


Spec. No. : C608FP
Issued Date : 2005.09.07
Revised Date :
Page No. : 1/4

BTD2061FP CYStek Product Specification



Low Vcesat NPN Epitaxial Planar Transistor
BTD2061FP


Features
• Low saturation voltage, typically VCE(sat)=0.2V at IC/IB=2A/0.2A.
• Excellent DC current gain characteristics.
• Wide SOA(safe operating area).
• Pb-free package.

Symbol Outline



Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 60
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 3
Collector Current (Pulse) ICP 6 (Note 1)
A
Power Dissipation @ TA=25℃ PD 2
Power Dissipation @ TC=25℃ PD 30
W
Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W
Thermal Resistance, Junction to Case RθJC 4.167 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : 1. Single Pulse , Pw≦ 380µs,Duty≦ 2%.
BTD2061FP

B： Base
C： Collector
E： Emitter
TO-220FP

B C E