CYStech Electronics Corp.


Spec. No. : C848I3
Issued Date : 2003.04.18
Revised Date : 2004.06.30
Page No. : 1/4

BTD1864I3 CYStek Product Specification



Low Vcesat NPN Epitaxial Planar Transistor
BTD1864I3
Features
• Low VCE(sat)
• Excellent current gain characteristics
• Complementary to BTB1243I3


Symbol Outline




Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCES
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 6
IC(DC) 5
Collector Current
IC(Pulse) 7.5 *1
A
Pd(TA=25℃ ) 1
Power Dissipation
Pd(TC=25℃ ) 15
W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : *1. Single Pulse Pw=10ms

TO-251

B C

BTD1864I3

B： Base
C： Collector
E： Emitter B C E