CYStech Electronics Corp.


Spec. No. : C855M3-R
Issued Date : 2004.08.06
Revised Date : 2005.01.14
Page No. : 1/4

BTD1857AM3 CYStek Product Specification


Silicon NPN Epitaxial Planar Transistor

BTD1857AM3


Description
• High BVCEO
• High current capability
• Complementary to BTB1236AM3

Symbol Outline


Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 1.5 A
Collector Current (Pulse) ICP 3
0.6
1 (Note 1) Power Dissipation PD
2 (Note 2)
W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 . When mounted on ceramic with area measuring 40×40×1 mm


BTD1857AM3

SOT-89



B： Base
C： Collector
E： Emitter
B C E