BTD1857AE3
器件描述：Silicon NPN Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：160.53KB，共4页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C855E3
Issued Date : 2004.08.06
Revised Date :
Page No. : 1/4
BTD1857AE3 CYStek Product Specification
Silicon NPN Epitaxial Planar Transistor
BTD1857AE3
Description
• High BVCEO
• High current capability
• Complementary to BTB1236AE3
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 1.5 A
Collector Current (Pulse) ICP 3
Power Dissipation @TA=25℃ 2 W
Power Dissipation @TC=25℃
PD
20 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTD1857AE3
TO-220AB
B C E
B： Base
C： Collector
E： Emitter
Spec. No. : C855E3
Issued Date : 2004.08.06
Revised Date :
Page No. : 1/4
BTD1857AE3 CYStek Product Specification
Silicon NPN Epitaxial Planar Transistor
BTD1857AE3
Description
• High BVCEO
• High current capability
• Complementary to BTB1236AE3
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 1.5 A
Collector Current (Pulse) ICP 3
Power Dissipation @TA=25℃ 2 W
Power Dissipation @TC=25℃
PD
20 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTD1857AE3
TO-220AB
B C E
B： Base
C： Collector
E： Emitter