BTD1805J3
器件描述：Low Vcesat NPN Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：163.99KB，共4页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C820J3
Issued Date : 2004.12.19
Revised Date :2005.07.26
Page No. : 1/ 4
BTD1805J3 CYStek Product Specification
Low Vcesat NPN Epitaxial Planar Transistor
BTD1805J3
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
• Very low collector-to-emitter saturation voltage
• Fast switching speed
• High current gain characteristic
• Large current capability
Applications
• CCFL drivers
• Voltage regulators
• Relay drivers
• High efficiency low voltage switching applications
Symbol Outline
BTD1805J3
B： Base
C： Collector
E： Emitter
TO-252
B C E
Spec. No. : C820J3
Issued Date : 2004.12.19
Revised Date :2005.07.26
Page No. : 1/ 4
BTD1805J3 CYStek Product Specification
Low Vcesat NPN Epitaxial Planar Transistor
BTD1805J3
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
• Very low collector-to-emitter saturation voltage
• Fast switching speed
• High current gain characteristic
• Large current capability
Applications
• CCFL drivers
• Voltage regulators
• Relay drivers
• High efficiency low voltage switching applications
Symbol Outline
BTD1805J3
B： Base
C： Collector
E： Emitter
TO-252
B C E