BTC945A3
器件描述：General Purpose NPN Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：180.31KB，共5页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C204A3
Issued Date : 2003.04.01
Revised Date : 2005.01.03
Page No. : 1 / 5
BTC945A3 CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTC945A3
Description
• The BTC945A3 is designed for use in driver stage of AF amplifier and low speed switching.
• Complementary to BTA733A3.
• Pb-free package
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50
Emitter-Base Voltage VEBO 5 V
Collector Current IC 100 mA
Base Current IB 20 mA
Power Dissipation @Ta=25℃ Pd 625 mW
Thermal Resistance, Junction to Ambient RθJA 200 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
TO-92
BTC945A3
B： Base
C： Collector
E： Emitter
E C B
Spec. No. : C204A3
Issued Date : 2003.04.01
Revised Date : 2005.01.03
Page No. : 1 / 5
BTC945A3 CYStek Product Specification
General Purpose NPN Epitaxial Planar Transistor
BTC945A3
Description
• The BTC945A3 is designed for use in driver stage of AF amplifier and low speed switching.
• Complementary to BTA733A3.
• Pb-free package
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50
Emitter-Base Voltage VEBO 5 V
Collector Current IC 100 mA
Base Current IB 20 mA
Power Dissipation @Ta=25℃ Pd 625 mW
Thermal Resistance, Junction to Ambient RθJA 200 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
TO-92
BTC945A3
B： Base
C： Collector
E： Emitter
E C B