CYStech Electronics Corp.


Spec. No. : C213WC3
Issued Date : 2003.08.15
Revised Date :
Page No. : 1/3

BTC5181WC3 CYStek Product Specification

High Frequency NPN Epitaxial Planar Transistor
BTC5181WC3
Description
The BTC5181WC3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification
application.
Symbol Outline

Features
• Low current consumption and high gain:
∣ S21e∣² = 12dB ( typ. ) at VCE= 2 V, IC= 7 mA, f = 2 GHz
∣ S21e∣² = 11dB ( typ. ) at VCE= 1 V, IC= 5 mA, f = 2 GHz
• Super mini-mold package
Applications
• Low noise and high gain amplifiers & Oscillator buffer amplifiers
Absolute Maximum Ratings (TA=25℃ )
Parameters Symbol Limits Unit
Collector-Emitter Breakdown Voltage V
CEO
3 V
Collector-Base Breakdown Voltage V
CBO
5 V
Emitter-Base Breakdown Voltage V
EBO
2 V
Collector Current I
C
10 mA
Collector Power Dissipation Pd 30 mW
Junction Temperature T
j
150 °C
Storage Temperature T
stg
-65~+150 °C



SOT-523


BTC5181WC3

B： Base
C： Collector
E： Emitter