BTC5096WC3
器件描述:High Cutoff Frequency NPN Epitaxial Planar Transistor
文件大小:177.44KB,共8页
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器件资料摘要:
CYStech Electronics Corp.
Spec. No. : C212WC3
Issued Date : 2003.08.15
Revised Date :
Page No. : 1/8
BTC5096WC3 CYStek Product Specification
High Cutoff Frequency NPN Epitaxial Planar Transistor
BTC5096WC3
Description
The BTC5096WC3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and
CATV band.
Symbol Outline
Features
• Low Noise and High Gain:
• NF=1.4dB, TYP. @ V
CE
=2V, Ic=4.2mA, f=0.9GHz
Ga=12dB, TYP. @ V
CE
=2V, Ic=4.2mA, f=0.9GHz
∣ S21∣² =13.5dB @ V
CE
=5V, Ic =4.5mA, f=0.9GHz
Applications
• Low noise and high gain amplifiers & Oscillator buffer amplifiers
• Cordless Phone : LNA , MIX ,and OSC
• Remote Controller
Absolute Maximum Ratings
• Maximum Ratings (Ta=25°C)
Parameters Symbol Limits Unit
Collector-Emitter Breakdown Voltage V
CEO
10 V
Collector-Base Breakdown Voltage V
CBO
18
Emitter-Base Breakdown Voltage V
EBO
2.5 V
Collector Current I
C
20 *1 mA
Collector Power Dissipation Pd 100 mW
Junction Temperature T
j
125 °C
Storage Temperature T
stg
-50~125 °C
Note: *1 Here we define the point DC current gain drops off.
SOT-523
BTC5096WC3
B: Base
C: Collector
E: Emitter