BTC4505A3
器件描述：High Voltage NPN Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：145.04KB，共4页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C210A3-R
Issued Date : 2003.10.15
Revised Date :2004.04.02
Page No. : 1/4
BTC4505A3 CYStek Product Specification
High Voltage NPN Epitaxial Planar Transistor
BTC4505A3
Features
• High breakdown voltage. (BVCEO = 400V)
• Low saturation voltage, typically VCE(sat) = 0.1V at IC / IB=10mA / 1mA.
• Complementary to BTA1759A3
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limit Unit
Collector-Base Voltage VCBO 400 V
Collector-Emitter Voltage VCEO
Emitter-Base Voltage VEBO 6 V
Collector Current IC 300 mA
Power Dissipation Pd 625 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
TO-92
BTC4505A3
B： Base
C： Collector
E： Emitter
E B C
Spec. No. : C210A3-R
Issued Date : 2003.10.15
Revised Date :2004.04.02
Page No. : 1/4
BTC4505A3 CYStek Product Specification
High Voltage NPN Epitaxial Planar Transistor
BTC4505A3
Features
• High breakdown voltage. (BVCEO = 400V)
• Low saturation voltage, typically VCE(sat) = 0.1V at IC / IB=10mA / 1mA.
• Complementary to BTA1759A3
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limit Unit
Collector-Base Voltage VCBO 400 V
Collector-Emitter Voltage VCEO
Emitter-Base Voltage VEBO 6 V
Collector Current IC 300 mA
Power Dissipation Pd 625 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
TO-92
BTC4505A3
B： Base
C： Collector
E： Emitter
E B C