CYStech Electronics Corp.


Spec. No. : C854M3
Issued Date : 2004.08.20
Revised Date :
Page No. : 1/4

BTB1236AM3 CYStek Product Specification


Silicon PNP Epitaxial Planar Transistor

BTB1236AM3

Description
• High BVCEO
• High current capability

Symbol Outline


Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -180 V
Collector-Emitter Voltage VCEO -160
Emitter-Base Voltage VEBO -5 V
Collector Current (DC) IC -1.5 A
Collector Current (Pulse) ICP -3 (Note 1) A
0.6 W
1 (Note 2) W Power Dissipation PD
2 (Note 3) W
208 °C/W
125 (Note 2) °C/W Thermal Resistance, Junction to Ambient RθJA
62.5 (Note 3) °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : 1. Single Pulse Pw≦ 350µs, Duty≦ 2%.
2. When mounted on FR-4 PCB with area measuring 10×10×1 mm.
3. When mounted on ceramic with area measuring 40×40×1 mm
BTB1236AM3

B C E
SOT-89
B： Base
C： Collector
E： Emitter