CYStech Electronics Corp.


Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2004.07.02
Page No. : 1/4

BTB1412J3 CYStek Product Specification

Low Vcesat PNP Epitaxial Planar Transistor
BTB1412J3
Features
• Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A
• Excellent DC current gain characteristics
• Complementary to BTD2118J3


Symbol Outline




Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -20 V
Collector-Emitter Voltage VCEO -15
Emitter-Base Voltage VEBO -6 V
IC(DC) -5
Collector Current
IC(Pulse) -10 *1
A
Pd(TA=25℃ ) 1
Power Dissipation
Pd(TC=25℃ ) 10
W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : *1. Single Pulse Pw=10ms


BTB1412J3

TO-252


B： Base
C： Collector
E： Emitter
B C E