CYStech Electronics Corp.


Spec. No. : C851N3
Issued Date : 2004.02.27
Revised Date : 2004.07.01
Page No. : 1/4

BTB1386LN3 CYStek Product Specification

Low Vcesat PNP Epitaxial Planar Transistor
BTB1386LN3
Features
• Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A
• Excellent DC current gain characteristics
• Complementary to BTD2098LN3


Symbol Outline



Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -20 V
Collector-Emitter Voltage VCEO -15
Emitter-Base Voltage VEBO -6 V
IC(DC) -5
Collector Current
IC(Pulse) -10 (Note )
A
Power Dissipation PD 225 mW
Thermal Resistance, Junction to Ambient RθJA 556 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : 1. Single Pulse Pw≦ 350µs, Duty≦ 2%.




BTB1386LN3

SOT-23

B： Base
C： Collector
E： Emitter