CYStech Electronics Corp.


Spec. No. : C816I3
Issued Date : 2003.07.03
Revised Date :
Page No. : 1/4

BTB1326I3 CYStek Product Specification

Low Vcesat PNP Epitaxial Planar Transistor
BTB1326I3
Features
• Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A
• Excellent DC current gain characteristics
• Complementary to BTD2097I3


Symbol Outline




Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -20 V
Collector-Emitter Voltage VCEO -15
Emitter-Base Voltage VEBO -6 V
Collector Current (DC) IC -5
Collector Current (Pulse) ICP -10 *1
A
Pd(TA=25℃ ) 1
Power Dissipation
Pd(TC=25℃ ) 10
W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : *1. Single Pulse, Pw=10ms


BTB1326I3

TO-251


B： Base
C： Collector
E： Emitter
B C E