BTB1236AT3
器件描述：Silicon PNP Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：175.14KB，共4页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C854T3
Issued Date : 2005.08.23
Revised Date :
Page No. : 1/4
BTB1236AT3 CYStek Product Specification
Silicon PNP Epitaxial Planar Transistor
BTB1236AT3
Description
• High BVCEO
• High current capability
• Pb-free package
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -180 V
Collector-Emitter Voltage VCEO -160
Emitter-Base Voltage VEBO -5 V
Collector Current (DC) IC -1.5 A
Collector Current (Pulse) ICP -3
Base Current IB 0.5 A
Power Dissipation @TA=25℃ 1
Power Dissipation @TC=25℃
PD
20
W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTB1236AT3
TO-126
B： Base
C： Collector
E： Emitter
E C B
Spec. No. : C854T3
Issued Date : 2005.08.23
Revised Date :
Page No. : 1/4
BTB1236AT3 CYStek Product Specification
Silicon PNP Epitaxial Planar Transistor
BTB1236AT3
Description
• High BVCEO
• High current capability
• Pb-free package
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -180 V
Collector-Emitter Voltage VCEO -160
Emitter-Base Voltage VEBO -5 V
Collector Current (DC) IC -1.5 A
Collector Current (Pulse) ICP -3
Base Current IB 0.5 A
Power Dissipation @TA=25℃ 1
Power Dissipation @TC=25℃
PD
20
W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
BTB1236AT3
TO-126
B： Base
C： Collector
E： Emitter
E C B