CYStech Electronics Corp.


Spec. No. : C601J3
Issued Date : 2004.05.17
Revised Date :2004.09.17
Page No. : 1/4

BTA1952J3 CYStek Product Specification

Low Vcesat PNP Epitaxial Planar Transistor
BTA1952J3
Features
• Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A
• Excellent DC current gain characteristics
• Wide SOA
• Complementary to BTC5103J3


Symbol Outline




Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage VCEO -80
Emitter-Base Voltage VEBO -5 V
IC(DC)
Collector Current
IC(Pulse) -10 *1
A
Pd(TA=25℃ ) 1
Power Dissipation
Pd(TC=25℃ ) 10
W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : *1. Single Pulse Pw=10ms


BTA1952J3

TO-252


B： Base
C： Collector
E： Emitter
B C E