CYStech Electronics Corp.
Spec. No. : C343SN
Issued Date : 2003.08.19
Revised Date :2003.12.05
Page No. : 1/4

ASD723SN CYStek Product Specification

Advanced Schottky Barrier Diodes
ASD723SN

Features:
● Designed for mounting on small surface
● Low stored charge
● Majority carrier conduction

Mechanical data:
● Case: 0805(2012) Standard package, molded plastic
● Terminals : Solder plated, solderable per MIL-STD-750, method 2026.
● Polarity: Indicated by cathode band
● Mounting position: Any
● Weight: 4.8mg (approximately)
Absolute Maximum Ratings(Ta=25℃ )

Characteristics Symbol Value Unit
Continuous Reverse Voltage VR 30 V
Average Rectified Current IO 200 mA
Forward Surge Current @ 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
IFSM 1.5 A
Capacitance between Terminals @ f=1MHz and applied
10VDC Reverse Voltage
CT 20 pF
Junction Temperature Tj -40 to +125 °C
Storage Temperature Range Tstg -40 to +125 °C

Electrical Characteristics ( TA=25°C, unless otherwise noted)
Parameter Condition Symbol Min Typ Max Unit
Forward Voltage IF = 200mADC V
F
- - 0.55 V
Reverse Current VR = 30VDC I
R
- - 15 µA