2N4403A3
器件描述：General Purpose PNP Epitaxial Planar Transistor
器件厂商：CYSTEKEC [Cystech Electonics Corp.]
文件大小：156.22KB，共4页
Sponsor by e络盟器件资料摘要：
CYStech Electronics Corp.
Spec. No. : C305A3
Issued Date : 2003.06.13
Revised Date : 2004.02.23
Page No. : 1/4
2N4403A3 CYStek Product Specification
General Purpose PNP Epitaxial Planar Transistor
2N4403A3
Description
• The2N4403A3 is designed for using in driver stage of AF amplifier and general purpose amplification.
• Large IC , IC Max .= -0.6A
• Low VCE(sat), typically -0.2V at IC/IB = -300mA / -30mA. Ideal for low-Voltage operation
• Complementary to 2N4401A3.
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40
Emitter-Base Voltage VEBO -5 V
Collector Current IC -0.6 A
Power Dissipation Pd 625 mW
Thermal Resistance, Junction to Ambient RθJA 200 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
TO-92
2N4403A3
B： Base
C： Collector
E： Emitter
E B C
Spec. No. : C305A3
Issued Date : 2003.06.13
Revised Date : 2004.02.23
Page No. : 1/4
2N4403A3 CYStek Product Specification
General Purpose PNP Epitaxial Planar Transistor
2N4403A3
Description
• The2N4403A3 is designed for using in driver stage of AF amplifier and general purpose amplification.
• Large IC , IC Max .= -0.6A
• Low VCE(sat), typically -0.2V at IC/IB = -300mA / -30mA. Ideal for low-Voltage operation
• Complementary to 2N4401A3.
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40
Emitter-Base Voltage VEBO -5 V
Collector Current IC -0.6 A
Power Dissipation Pd 625 mW
Thermal Resistance, Junction to Ambient RθJA 200 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
TO-92
2N4403A3
B： Base
C： Collector
E： Emitter
E B C