Rev.1.00, Jun.14.2004, page 1 of 8
BB505C
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
REJ03G0364-0100Z
Rev.1.00
Jun.14.2004
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise; NF = 1.5 dB typ. at f = 900 MHz
• High gain; PG = 24 dB typ. at f = 900 MHz
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 190 V at C = 200 pF, Rs = 0 conditions.
• Provide mini mold packages; CMPAK-4 (SOT-343mod)
Outline
CMPAK-4
1. Source
2. Gate1
3. Gate2
4. Drain
1
4
3
2
Notes: 1. Marking is “ES-”.
2. BB505C is individual type number of RENESAS BBFET.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DS
6V
Gate1 to source voltage V
G1S
+6
–0
V
Gate2 to source voltage V
G2S
+6
–0
V
Drain current I
D
20 mA
Channel power dissipation Pch
note3
250 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 3. Value on the glass epoxy board (50 mm × 40 mm × 1 mm ).