Transistors
Publication date : December 2004 SJC00326AED 1
2SA2079
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5848
 Features
 High forward current transfer ratio h
FE
 Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package
Package: 0.6 mm × 1.0 mm (hight 0.39 mm)
 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
–45 V
Collector-emitter voltage (Base open) V
CEO
–45 V
Emitter-base voltage (Collector open) V
EBO
–7 V
Collector current I
C
–100 mA
Peak collector current I
CP
–200 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
–55 to +125 °C
 Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= –10 µA, I
E
= 0 –45 V
Collector-emitter voltage (Base open) V
CEO
I
C
= –2 mA, I
B
= 0 –45 V
Emitter-base voltage (Collector open) V
EBO
I
E
= –10 µA, I
C
= 0 –7 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= –20 V, I
E
= 0 – 0.1 µA
Collector-emitter cut-off current (Base open) I
CEO
V
CE
= –10 V, I
B
= 0 –100 µA
Forward current transfer ratio h
FE
V
CE
= –10 V, I
C
= –2 mA 180 390 
Collector-emitter saturation voltage V
CE(sat)
I
C
= –100 mA, I
B
= –10 mA – 0.2 – 0.5 V
Transition frequency f
T
V
CB
= –10 V, I
E
= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= –10 V, I
E
= 0, f = 1 MHz 2.2 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collector ML3-N2 Package
0.60
±
0.0
5
1.00±0.05
2
1
3
0.39
+0.01
−0.03
0.25±0.05 0.25±0.05
0.5
0
±
0.05
0.65±0.01
0.15
±
0.0
5
2
1
0.35
±
0.0
1
0.05±0.03
0.0
5
±
0.0
3
3
Marking Symbol : 3D