Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Capable of 2.5V gate drive BV
DSS
30V
▼ Lower on-resistance R
DS(ON)
35mΩ
▼ Surface mount package I
D
5A
Description
Absolute Maximum Ratings
Symbol Units
V
DS
V
V
GS
V
I
D
@T
A
=25℃ A
I
D
@T
A
=70℃ A
I
DM
A
P
D
@T
A
=25℃ W
W/℃
T
STG
℃
T
J
℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient
3
Max. 90 ℃/W
Data and specifications subject to change without notice 200105041
AP2306AGN
Pb Free Plating Product
Parameter Rating
Drain-Source Voltage 30
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 4.5V 5
Continuous Drain Current
3
, V
GS
@ 4.5V 4
Pulsed Drain Current
1
20
Total Power Dissipation 1.38
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.01
Thermal Data
Parameter
Storage Temperature Range
± 12
G
D
S
D
G
S
SOT-23
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial
applications.