Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Repetitive Avalanche Rated BV
DSS
600V
▼ Fast Switching Speed R
DS(ON)
12Ω
▼ Simple Drive Requirement I
D
1A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V
DS
Drain-Source Voltage V
V
GS
Gate-Source Voltage V
I
D
@T
C
=25℃ Continuous Drain Current, V
GS
@ 10V A
I
D
@T
C
=100℃ Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25℃ Total Power Dissipation W
W/℃
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current A
E
AR
Repetitive Avalanche Energy mJ
T
STG
℃
T
J
Operating Junction Temperature Range ℃
Thermal Data
Symbol Value Units
Rthj-c Thermal Resistance Junction-case Max. 4.3 ℃ /W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃ /W
Data & specifications subject to change without notice
Pb Free Plating Product
AP01L60H/J
0.5
-55 to 150
Parameter
1
±30
1
0.8
Parameter Rating
600
200629052-1/4
Storage Temperature Range -55 to 150
3
29
Linear Derating Factor 0.232
0.5
The TO-252 package is universally preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP01L60J) is available for low-profile applications.
G
D
S
TO-251(J)
G
D
S
TO-252(H)
G
D
S